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For the Inventor, By the Inventor

Tokyo, Japan

Nobuaki Hamanaka

This inventor holds 11 USPTO granted patents and 4 published patent applications and 1 EPO patent. Top assignees: Nec Corporation, Nec Electronics Corporation, Nec Energy Devices, Ltd.. Active years: 2001-2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Nobuaki Hamanaka. Retrieved from https://idiyas.com/inventor/nobuaki-hamanaka

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 11 

% Patents Active = 72.7

 

Average Co-Inventor Count = 1.5

ph-index = 4

Forward Citations = 44(Granted Patents)


Location History:

  • Tokyo, JP (2001 - 2004)
  • Kanagawa, JP (2007 - 2018)

Company Filing History:

goldMedal6 out of 36,684 
 
Nec Corporation
 patents
silverMedal4 out of 2,467 
 
Nec Electronics Corporation
 patents
bronzeMedal1 out of 92 
 
Nec Energy Devices, Ltd.
 patents

Years Active: 2001-2018

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11 patents (USPTO):Explore Patents
1. 10038194 - Negative electrode, method for producing the same, and battery (2018-07-31),
2. 7217654 - Semiconductor device and method of manufacturing the same (2007-05-15),
3. 7199058 - Method of manufacturing a semiconductor device and apparatus for manufacturing a semiconductor device (2007-04-03),
4. 6821687 - Photo mask for fabricating semiconductor device having dual damascene structure (2004-11-23),
5. 6569766 - Method for forming a silicide of metal with a high melting point in a semiconductor device (2003-05-27),
6. 6548421 - Method for forming a refractory-metal-silicide layer in a semiconductor device (2003-04-15),
7. 6544890 - Process for fabricating semiconductor device having silicide layer with low resistance and uniform profile and sputtering system used therein (2003-04-08),
8. 6482737 - Fabrication method of implanting silicon-ions into the silicon substrate (2002-11-19),
9. 6436783 - Method of forming MOS transistor (2002-08-20),
10. 6337272 - Method of manufacturing a semiconductor device (2002-01-08),
11. 6271549 - Process for fabricating a metal silicide layer of a semiconductor and apparatus (2001-08-07),

Title: The Innovative Mind of Nobuaki Hamanaka

Introduction: Nobuaki Hamanaka is a renowned inventor hailing from Tokyo, Japan, known for his groundbreaking contributions to various technological fields.

Latest Patents: Nobuaki Hamanaka holds several patents in the areas of robotics, artificial intelligence, and renewable energy technologies, showcasing his continuous commitment to innovation.

Career Highlights: With over two decades of experience in the tech industry, Hamanaka has worked for leading research institutions and multinational companies, spearheading projects that have revolutionized the way we interact with technology on a daily basis.

Collaborations: Throughout his career, Nobuaki Hamanaka has collaborated with top universities and cutting-edge startups, fostering a culture of creativity and forward thinking in the pursuit of technological advancement.

Conclusion: Nobuaki Hamanaka's passion for innovation and his relentless drive to push the boundaries of what is possible make him a true pioneer in the world of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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