The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2002
Filed:
Apr. 19, 2001
Nobuaki Hamanaka, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
In a method of fabricating a semiconductor device in which a metal film is formed that is to serve as the diffusion barrier layer material of a plug electrode material that is used when forming a plug electrode on a diffusion layer electrode or a gate electrode in which a metal silicide layer has been formed, increase in the resistance of the plug electrode is prevented. Immediately after the formation of a plug hole by a dry etching method, silicon ions are implanted with an acceleration voltage of at least 20 KeV and at a dosage of at least 1×10 atoms/cm , following which a titanium film and a titanium nitride film are formed as the metal film by a sputtering method without carrying out etching by an RF etching method.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile