The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2003
Filed:
Oct. 27, 2000
Applicant:
Inventors:
Assignee:
NEC Electronics Corporation, Kanagawa, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/144 ;
Abstract
A method for forming a silicide of a metal with high-melting-point in a semiconductor device includes the step of removing a higher-density impurity area which acts for prevention of forming the metal-silicide layer on the surface of the impurity-diffused region between the steps of implanting impurities to form an impurity-implanted region and annealing for reactions of cobalt and silicon of the diffused layer. The above-mentioned method of forming the metal-silicide layer on the surface of the impurity-diffused region proceeds smoothly to thereby prevent degradation of the initial gate withstand voltage and a higher sheet resistance.