The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2003
Filed:
Feb. 24, 2000
Applicant:
Inventor:
Nobuaki Hamanaka, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/144 ; H01L 2/13205 ;
U.S. Cl.
CPC ...
H01L 2/144 ; H01L 2/13205 ;
Abstract
Cobalt is sputtered on a silicon wafer in a deposition chamber of a magnetron sputtering system, and is conveyed to a load-lock chamber where a partial pressure of oxygen and/or the water concentration is controlled with introduction of nitrogen so as to present dicobalt disilicide layers from oxidation, thereby improving the production yield and reliability of the silicide layer morphology.
Hamanaka, Nobuaki. (2003). Process for fabricating semiconductor device having silicide layer with low resistance and uniform profile and sputtering system used therein (U.S. Patent No. 6544890). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6544890
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile