Naoto Horiguchi

Title: Naoto Horiguchi: Innovator in Stacked Transistor Technology

Introduction

Naoto Horiguchi is a prominent inventor based in Leuven, Belgium. He has made significant contributions to the field of semiconductor technology, particularly in the development of stacked transistor devices. With a total of 18 patents to his name, Horiguchi's work is at the forefront of innovation in this area.

Latest Patents

Horiguchi's latest patents include a method for forming a stacked transistor device. This method involves creating a fin structure that comprises a lower device sub-stack with lower channel nanosheets, a middle insulating layer, and an upper device sub-stack with an upper channel layer. The process also includes forming a gate structure and source and drain regions for both the lower channel nanosheets and the upper channel fins. Another notable patent is a method for forming a stacked field-effect transistor device, which details the steps for creating a bottom FET device and a top FET device, including the formation of a bonding layer and various etching processes.

Career Highlights

Throughout his career, Naoto Horiguchi has worked with esteemed organizations such as Imec Vzw and Vrije Universiteit Brussel. His experience in these institutions has allowed him to collaborate on cutting-edge research and development projects, further enhancing his expertise in semiconductor technologies.

Collaborations

Horiguchi has collaborated with notable colleagues, including Julien Ryckaert and Eugenio Dentoni Litta. These partnerships have contributed to the advancement of innovative solutions in the field of stacked transistor technology.

Conclusion

Naoto Horiguchi's contributions to the field of semiconductor technology through his innovative patents and collaborations highlight his role as a leading inventor. His work continues to influence advancements in stacked transistor devices, showcasing the importance of innovation in this rapidly evolving industry.