The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2025
Filed:
Dec. 01, 2022
Imec Vzw, Leuven, BE;
IMEC VZW, Leuven, BE;
Abstract
A FET device () is provided, the FET device including a substrate (), a source body (), a drain body () and a set of vertically spaced apart channel layers () extending between the source and drain body in a first direction along the substrate (), the source body () comprising a common source body portion () arranged at a first lateral side of the set of channel layers () and a set of vertically spaced apart source prongs () protruding from the common source body portion () in a second direction along the substrate (), transverse to the first direction, the drain body () comprising a common source body portion () arranged at the first lateral side of the set of channel layers () and a set of drain prongs () protruding from the common drain body portion () in the second direction; and a gate body () comprising a common gate body portion () arranged at a second lateral side of the channel layer (), opposite the first lateral side, and a set of gate prongs () protruding from the common gate body gate portion () in a third direction along the substrate (), opposite the first direction; wherein each channel layer () comprises a first side () and an opposite second side (), the first side arranged in abutment with a topside or an underside of a pair of source and drain prongs () and the second side () facing a gate prong ().