Boise, ID, United States of America

Nanseng Jeng


Average Co-Inventor Count = 1.9

ph-index = 12

Forward Citations = 491(Granted Patents)

Forward Citations (Not Self Cited) = 459(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Boise, ID (US) (1995 - 2005)
  • Vancouver, WA (US) (2000 - 2005)

Company Filing History:


Years Active: 1995-2005

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Areas of Expertise:
Silicon Barrier Layer
Gate Dielectric Integrity
Phase Shift Mask
Field Isolation Process
Trench Isolation Structure
Field Oxidation
Contact Plug Formation
Photosensitive Material
Field Effect Transistor
Oxide Thinning Reduction
Hemispherical Grain Silicon
Thermal Trench Isolation
52 patents (USPTO):Explore Patents

Title: The Innovations of Nanseng Jeng: A Pioneer in Semiconductor Technology

Introduction: Nanseng Jeng, based in Boise, ID, is an influential inventor known for his significant contributions to the field of semiconductor technology. With an impressive portfolio of 52 patents, Jeng's work has paved the way for advancements in integrated circuit design and manufacturing processes.

Latest Patents: Among his latest innovations are two noteworthy patents. The first is an "Intermediate Structure Having a Silicon Barrier Layer Encapsulating a Semiconductor Substrate," which details a method of forming an isolation structure through various strategic processes, such as the implementation of n-type and p-type areas, pad oxide films, and diffusion barriers. This invention enhances the efficiency and reliability of semiconductor devices. The second patent, "Barrier in Gate Stack for Improved Gate Dielectric Integrity," introduces a novel barrier layer that comprises silicon mixed with nitrogen to protect gate dielectrics in integrated transistors. This advancement is particularly useful in conjunction with CVD tungsten silicide straps, ensuring enhanced performance in integrated circuits.

Career Highlights: Throughout his career, Nanseng Jeng has held key positions at reputable companies, including Micron Technology Incorporated and Micron Semiconductor, Inc. His expertise and innovative spirit have been integral to the advancements achieved within these organizations. Jeng's patents have contributed to improved methods and materials in semiconductor fabrication, showcasing his role as a leading figure in the industry.

Collaborations: Jeng has collaborated with esteemed professionals throughout his career, including Pierre C. Fazan and Viju K. Mathews. These partnerships reflect his commitment to pushing the boundaries of semiconductor technology and innovation. Working alongside talented colleagues, Jeng has furthered his impactful research and development initiatives.

Conclusion: Nanseng Jeng's extensive patent portfolio and collaborative efforts highlight his vital role in the semiconductor industry. His latest patents demonstrate cutting-edge advancements that not only enhance device performance but also contribute to the future of integrated circuit design. With a strong foundation in innovation, Jeng continues to inspire the next generation of inventors and engineers.

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