The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2004
Filed:
Mar. 10, 1998
Applicant:
Inventors:
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1762 ;
U.S. Cl.
CPC ...
H01L 2/1762 ;
Abstract
A field isolation process performed on a silicon wafer is carried out by high pressure oxidation. Using oxygen rather than water vapor as the oxidant substantially eliminates nitride inclusions via the Kooi effect. Preferred high pressure field oxidation processes simplify all CMOS flows by eliminating the need for sacrificial oxide growth and removal steps.