Mitsuru Morimoto

This inventor holds 8 USPTO granted patents. Top assignees: Rohm Co., Ltd., Rohm Gmbh. Active years: 2002-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Mitsuru Morimoto. Retrieved from https://idiyas.com/inventor/mitsuru-morimoto-zjx2ijs8

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 8

% Patents Active = 62.5

Average Co-Inventor Count = 2.5

ph-index = 2

Forward Citations = 9(Granted Patents)

Company Filing History:

Years Active: 2002-2026

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8 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12768073 - Fabricating apparatus of SiC epitaxial wafer and fabrication method of the SiC epitaxial wafer (2026-10-20),

2. 12696508 - SiC semiconductor substrate and fabrication method of the SiC semiconductor substrate (2026-07-28),

3. 12666884 - SiC semiconductor substrate and fabrication method of the SiC semiconductor substrate (2026-06-23),

4. 12495592 - Semiconductor substrate, semiconductor device, and manufacturing methods of the same (2025-12-09),

5. 12074201 - Semiconductor substrate, semiconductor device, and manufacturing methods of the same (2024-08-27),

6. 11004938 - Semiconductor substrate structure and power semiconductor device (2021-05-11),

7. 6686692 - Organic electroluminescent device with color filter entirely covering flat organic electroluminescent layer (2004-02-03),

8. 6338979 - Method of manufacturing organic EL device (2002-01-15),

Title: Innovator Mitsuru Morimoto: Advancements in Semiconductor Technology

Introduction: Mitsuru Morimoto, a prominent inventor based in Kyoto, Japan, has made significant contributions to the semiconductor industry. With a total of four patents to his name, Morimoto has focused on enhancing semiconductor substrates and devices, paving the way for innovations in manufacturing and efficiency.

Latest Patents: Morimoto's latest patents reflect his commitment to cutting-edge technology in semiconductors. One notable patent involves a semiconductor substrate that comprises a drift layer formed from a single crystal silicon carbide (SiC) semiconductor. This substrate incorporates a buffer layer and a polycrystalline structure that effectively suppresses defects at the junction interface, thereby reducing manufacturing costs. Another key patent outlines a semiconductor substrate structure that includes an epitaxial growth layer bonded to a substrate, utilizing room-temperature bonding or diffusion bonding techniques to enhance efficiency.

Career Highlights: Mitsuru Morimoto has established himself as a key figure at Rohm Co., Ltd., where he continues to innovate within the semiconductor field. His work focuses on improving the performance and reliability of semiconductor devices, contributing to the overall advancement of technology in this critical sector.

Collaborations: Throughout his career, Morimoto has collaborated with talented colleagues such as Haruo Tanaka and Takuji Maekawa, pooling their expertise to drive forward significant innovations in semiconductor technologies. These partnerships have proven essential in bringing novel ideas to fruition and enhancing the research and development capabilities at Rohm Co., Ltd.

Conclusion: Mitsuru Morimoto's dedication to innovation in semiconductor technology is evident through his patents and contributions at Rohm Co., Ltd. His work not only addresses current challenges in the industry but also sets the stage for future advancements. As the semiconductor landscape continues to evolve, inventors like Morimoto play a vital role in shaping its trajectory.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]