The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2026
Filed:
Jun. 07, 2023
Rohm Co., Ltd., Kyoto, JP;
Noriyuki Masago, Kyoto, JP;
Takuji Maekawa, Kyoto, JP;
Mitsuru Morimoto, Kyoto, JP;
Takayasu Oka, Kyoto, JP;
ROHM CO., LTD., Kyoto, JP;
Abstract
A semiconductor substrate () includes: an SiC single crystal substrate (SB), a first graphene layer (GR) disposed on an Si plane of the SiC single crystal substrateSB; an SiC epitaxial growth layer (RE) formed above the SiC single crystal substrate via the first graphene layer; and a second graphene layer (GR) disposed on an Si plane of the SiC epitaxial growth layer. There is also included an SiC polycrystalline substrate (P) provisionally bonded onto the SiC epitaxial growth layer via the second graphene layer. The SiC single crystal substrate is able to be reused by being separated from the SiC epitaxial growth layer. This semiconductor substrate further includes an SiC polycrystalline growth layer (PC) CVD grown on the C plane of the SiC epitaxial growth layer; and the SiC epitaxial growth layer is transferred to the SiC polycrystalline growth layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile