Kyoto, Japan

Noriyuki Masago

This inventor holds 4 USPTO granted patents and 3 published patent applications. Top assignees: Rohm Co., Ltd., Rohm Gmbh, Massachusetts Institute of Technology. Active years: 2008-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Noriyuki Masago. Retrieved from https://idiyas.com/inventor/noriyuki-masago

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 4 

% Patents Active = 50.0

Average Co-Inventor Count = 3.4

ph-index = 1


Company Filing History:


Years Active: 2008-2026

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4 patents (USPTO):Explore Patents

Title: Noriyuki Masago: Innovator in Silicon Carbide Technology

Introduction

Noriyuki Masago is a prominent inventor based in Kyoto, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the growth of silicon carbide (SiC) films. With a total of 4 patents, his work has implications for various applications in electronics and materials science.

Latest Patents

Masago's latest patents focus on systems and methods for the growth of silicon carbide over layers comprising graphene and/or hexagonal boron nitride. These patents describe a process where a SiC film is fabricated over a layer that is disposed over a substrate. The innovative approach aims to reduce defect density in the SiC film by ensuring that the layer and/or substrate is lattice-matched with the SiC film. Additionally, the fabricated SiC film can be removed from the substrate using a stressor attached to the film. This method allows for the layer to serve as a reusable platform for growing SiC films, facilitating fast and precise release at the layer surface.

Another notable patent involves a nonvolatile memory device that enhances the accuracy of screening testing. This device operates at or below the withstand voltage limit of high-voltage elements during testing. It includes a high voltage production circuit, a high voltage waveform conversion circuit, and a memory cell section where data rewriting occurs through the application of the converted high voltage. This innovative design improves the efficiency and reliability of memory devices.

Career Highlights

Throughout his career, Noriyuki Masago has worked with esteemed organizations such as Rohm Co., Ltd. and the Massachusetts Institute of Technology. His experience in these institutions has allowed him to collaborate with leading experts in the field and contribute to groundbreaking research and development.

Collaborations

Masago has collaborated with various professionals, including his coworker Yoshihiro Tada. Their joint efforts have further advanced the understanding and application of semiconductor technologies.

Conclusion

Noriyuki Masago's contributions to the field of semiconductor technology, particularly in silicon carbide growth, highlight his innovative spirit and dedication to advancing electronic materials. His patents and career achievements reflect a commitment to excellence in research and development.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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