The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2025
Filed:
Oct. 13, 2023
Massachusetts Institute of Technology, Cambridge, MA (US);
The Government of the United States of America, As Represented BY the Secretary of the Navy, Arlington, VA (US);
Rohm Co., Ltd., Kyoto, JP;
Rachael L. Myers-Ward, Arlington, VA (US);
Jeehwan Kim, Cambridge, MA (US);
Kuan Qiao, Cambridge, MA (US);
Wei Kong, Cambridge, MA (US);
David Kurt Gaskill, Alexandria, VA (US);
Takuji Maekawa, Kyoto, JP;
Noriyuki Masago, Kyoto, JP;
Massachusetts Institute of Technology, Cambridge, MA (US);
The Government of the United States of America, as Represented by the Secretary of the Navy, Arlington, VA (US);
ROHM Co., Ltd., Kyoto, JP;
Abstract
Systems and methods for growth of silicon carbide over a layer comprising graphene and/or hexagonal boron nitride, and related articles, are generally described. In some embodiments, a SiC film is fabricated over a layer comprising graphene and/or hexagonal boron nitride, which in turn is disposed over a substrate. The layer and/or the substrate may be lattice-matched with the SiC film to reduce defect density in the SiC film. The fabricated SiC film may then be removed from the substrate via, for example, a stressor attached to the SiC film. In certain cases, the layer serves as a reusable platform for growing SiC films and also serves a release layer that allows fast, precise, and repeatable release at the layer surface.