This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignees: Massachusetts Institute of Technology, Rohm Co., Ltd., USA as Represented by Secretary of the Navy. Active years: 2025.
Company Filing History:
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1 out of 16,271 Years Active: 2025
Title: Kuan Qiao: Innovator in Silicon Carbide Growth Technologies
Introduction
Kuan Qiao is a notable inventor based in Cambridge, MA (US). He has made significant contributions to the field of materials science, particularly in the growth of silicon carbide (SiC) films. His innovative approaches have implications for various applications in electronics and materials engineering.
Latest Patents
Kuan Qiao holds a patent titled "Systems and methods for growth of silicon carbide over a layer comprising graphene and/or hexagonal boron nitride and related articles." This patent describes methods for fabricating SiC films over a layer that includes graphene and/or hexagonal boron nitride. The technology aims to reduce defect density in the SiC film by ensuring that the layer and/or substrate is lattice-matched with the SiC film. The SiC film can be removed from the substrate using a stressor, allowing for a reusable platform for growing SiC films.
Career Highlights
Throughout his career, Kuan Qiao has worked with prestigious institutions, including the Massachusetts Institute of Technology (MIT) and the United States Navy. His work has been instrumental in advancing the understanding and application of silicon carbide technologies.
Collaborations
Kuan Qiao has collaborated with notable professionals in his field, including Jeehwan Kim. Their joint efforts have contributed to the development of innovative solutions in materials science.
Conclusion
Kuan Qiao's contributions to the growth of silicon carbide films highlight his role as a leading inventor in materials science. His patented technologies and collaborations continue to influence advancements in the field.