USA As Represented by Secretary of the Navy

Massachusetts Institute of Technology

Rohm Co., Ltd.

Kuan Qiao

David Kurt Gaskill

Takuji Maekawa

Wei Kong

Noriyuki Masago

Jeehwan Kim

Systems and methods for growth of silicon carbide over a layer comprising graphene and/or hexagonal boron nitride, and related articles, are generally described. In some embodiments, a SiC film is fabricated over a layer comprising graphene and/or hexagonal boron nitride, which in turn is disposed over a substrate. The layer and/or the substrate may be lattice-matched with the SiC film to reduce defect density in the SiC film. The fabricated SiC film may then be removed from the substrate via, for example, a stressor attached to the SiC film. In certain cases, the layer serves as a reusable platform for growing SiC films and also serves a release layer that allows fast, precise, and repeatable release at the layer surface.

Systems and methods for growth of silicon carbide over a layer comprising graphene and/or hexagonal boron nitride and related articles

Growing community of inventors

Cambridge, MA, United States of America

Kuan Qiao