Rohm Co., Ltd.

USA As Represented by Secretary of the Navy

Massachusetts Institute of Technology

Noriyuki Masago

David Kurt Gaskill

Yoshihiro Tada

Takuji Maekawa

Wei Kong

Kuan Qiao

Jeehwan Kim

Systems and methods for growth of silicon carbide over a layer comprising graphene and/or hexagonal boron nitride, and related articles, are generally described. In some embodiments, a SiC film is fabricated over a layer comprising graphene and/or hexagonal boron nitride, which in turn is disposed over a substrate. The layer and/or the substrate may be lattice-matched with the SiC film to reduce defect density in the SiC film. The fabricated SiC film may then be removed from the substrate via, for example, a stressor attached to the SiC film. In certain cases, the layer serves as a reusable platform for growing SiC films and also serves a release layer that allows fast, precise, and repeatable release at the layer surface.

Systems and methods for growth of silicon carbide over a layer comprising graphene and/or hexagonal boron nitride and related articles

A nonvolatile memory device improves the accuracy of screening testing while applying a voltage at or lower than the limit of the withstand voltage of an element for high voltage in the screening testing. The nonvolatile memory device includes a high voltage production circuit that produces a high voltage, a high voltage waveform conversion circuit to which the high voltage is input and which converts the voltage waveform, and a memory cell section provided with memory cells in which data rewriting is performed as a result of applying the converted high voltage. The high voltage waveform conversion circuit includes a test signal input section TEST and applies the high voltage input from the high voltage production circuit to the memory cell section without converting the voltage waveform when a test signal is input to the test signal input section.

Semiconductor device

Growing community of inventors

Kyoto, Japan

Noriyuki Masago