Fabricating apparatus of sic epitaxial wafer and fabrication method of the sic epitaxial wafer

Abstract

A fabricating apparatus () of an sic epitaxial wafer disclosed herein includes: a growth furnace (A); a gas mixing preliminary chamber () disposed outside the growth furnace and configured to mix carrier gas and/or material gas and to regulate a pressure thereof; a wafer boat () configured so that a plurality of SiC wafer pairs (WP), in which two substrates each having an SiC single crystal in contact with each other in a back-to-back manner, are disposed at equal intervals with a gap therebetween; and a heating unit () configured to heat the wafer boat disposed in the growth furnace to an epitaxial growth temperature. The carrier gas and/or the material gas are introduced into the growth furnace after preliminarily being mixed and pressure-regulated in the gas mixing preliminary chamber () to grow an SiC layer on a surface of each of the plurality of SiC wafer pairs.