The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2026
Filed:
Jul. 24, 2023
Rohm Co., Ltd., Kyoto, JP;
Makoto Takamura, Kyoto, JP;
Takuji Maekawa, Kyoto, JP;
Mitsuru Morimoto, Kyoto, JP;
Noriyuki Masago, Kyoto, JP;
Takayasu Oka, Kyoto, JP;
ROHM CO., LTD., Kyoto, JP;
Abstract
A semiconductor substrate disclosed herein includes: an SiC single crystal substrate; a graphene layer disposed on an Si plane of the SiC single crystal substrate; an SiC epitaxial growth layer disposed above the SiC single crystal substrate via the graphene layer; and a polycrystalline Si layer disposed on an Si plane of the SiC epitaxial growth layer. The semiconductor substrate may include a graphite substrate or an silicon substrate disposed on a polycrystalline Si layer. The semiconductor substrate may include an SiC polycrystalline growth layer disposed on a C plane of the SiC epitaxial growth layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile