Location History:
- Atlanta, GA (US) (2010 - 2013)
- San Diego, CA (US) (2015 - 2018)
Company Filing History:
Years Active: 2010-2018
Title: Minsik Ahn: Innovator in Radio Frequency Amplification
Introduction
Minsik Ahn is a prominent inventor based in Atlanta, GA, known for his significant contributions to the field of radio frequency (RF) amplification. With a total of 12 patents to his name, Ahn has made remarkable advancements that have influenced various technological applications.
Latest Patents
Among his latest patents is the "Adaptive Bias Circuit for a Radio Frequency (RF) Amplifier." This innovative circuit includes a first transistor with a gate, source, and drain, along with an inductor coupled between the gate and the source. The source is further connected to a current source, while the gate is coupled to an amplifier. Another notable patent is for "Multi-Mode Multi-Band Power Amplifiers." This invention features an amplifier module that comprises a transmit path with a first and a second amplifier. The module includes a transformer that can be switchably configured to couple the first amplifier in series with the second amplifier in one mode, and to bypass the second amplifier in another mode.
Career Highlights
Minsik Ahn has worked with esteemed organizations such as Samsung Electro-Mechanics Co., Ltd. and Georgia Tech Research Corporation. His experience in these companies has allowed him to refine his skills and contribute to cutting-edge research and development in RF technology.
Collaborations
Throughout his career, Ahn has collaborated with notable colleagues, including Chang-Ho Lee and Wangmyong Woo. These partnerships have fostered a creative environment that has led to innovative solutions in the field.
Conclusion
Minsik Ahn's work in radio frequency amplification showcases his dedication to innovation and technology. His patents reflect a deep understanding of complex electronic systems and a commitment to advancing the field. Ahn's contributions will undoubtedly continue to influence future developments in RF technology.
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