Samsung Electro-mechanics Co., Ltd.

Qualcomm Incorporated

Georgia Tech Research Corporation

Minsik Ahn

Chang-Ho Lee

Joy Laskar

Wangmyong Woo

Haksun Kim

Jaejoon Chang

Aristotele Hadjichristos

Jeongwon Cha

Kyu Hwan An

Woonyun Kim

Changhyuk Cho

Taejoong Song

Dong Ho Lee

Yunseo Park

Hyungwook Kim

Jae Joon Chang

Youngchang Yoon

A circuit includes a first transistor comprising a gate, a source, and a drain, and an inductor coupled between the gate and the source of the first transistor, wherein the source is further coupled to a current source and the gate is further coupled to an amplifier.

Adaptive bias circuit for a radio frequency (RF) amplifier

Exemplary embodiments are directed to an amplifier module which may comprise a transmit path including a first amplifier and a second amplifier. The exemplary amplifier module may further include a transformer coupled between the first amplifier and the second amplifier and switchably configured for coupling the first amplifier in series with the second amplifier in a first mode and coupling the first amplifier to bypass the second amplifier in a second mode.

Multi-mode multi-band power amplifiers

A high power tunable capacitor is disclosed. In an exemplary embodiment, an apparatus includes a capacitor coupled to an input signal, a body contacted switch coupled to the capacitor, the body contacted switch coupled to a body bias signal, and a floating body switch coupled between the body contacted switch and a ground, the floating body switch configured to decouple the body bias signal from the ground.

High power tunable capacitor

A multi-throw antenna switch with off-state capacitance reduction is disclosed. In an exemplary embodiment, an apparatus is provided that includes a plurality of first stage switches connected to an antenna, and a plurality of second stage switches connected to the plurality of first stage switches, each first stage switch connected in series to one or more second stage switches to form a plurality of switchable signal paths connected to the antenna.

Multi-throw antenna switch with off-state capacitance reduction

Example embodiments of the invention are directed to CMOS differential antenna switches with multi-section impedance transformation. The differential architecture can provide relief from large voltage swings of the power amplifiers by distributing the voltage stress over the receiver switch with two of the identical or substantially similar single-ended switches. In order to reduce the voltage stress further, multi-section impedance transformations can be used. Degraded insertion loss due to the impedance transformation technique can be compensated by selecting an optimal impedance for the antenna switch operation. Accordingly, the use of the multi-section impedance transformations with the differential antenna switch architecture enables high power handling capability for the antenna switch with acceptable efficiency for the transmitter module.

Systems and methods for complementary metal-oxide-semiconductor (CMOS) differential antenna switches using multi-section impedance transformations

Example driver circuits can utilize shared-charge recycling charge pump structures. In particular, an example shared-charge recycling process may be applied to a clock buffer and charge transfer cells of the charge pump in a driver circuit. An example recycling process may include recycling of shared charges between the capacitors/capacitances in the charge transfer cells. An example recycling process may use the charges in one or more capacitors to charge one or more other capacitors before the charges are wasted or otherwise discharged to ground. Such recycling may significantly reduce the power consumption of the charge pump while still providing a high output voltage level, according to an example embodiment of the invention.

Systems, methods, and apparatuses for complementary metal oxide semiconductor (CMOS) driver circuits using shared-charge recycling charge pump structures

A tunable capacitor device may be provided in accordance with example embodiments of the invention. The tunable capacitor device may include a first capacitor; a second capacitor; a third capacitor, where the first, second, and third capacitors are connected in series, wherein the second capacitor is positioned between the first capacitor and the second capacitor; and at least one switch transistor, where the at least one switch transistor is connected in parallel with the second capacitor.

High-power tunable capacitor

Systems and methods may be provided for a CMOS RF antenna switch. The systems and methods for the CMOS RF antenna switch may include an antenna that is operative to transmit and receive signals over at least one radio frequency (RF) band, and a transmit switch coupled to the antenna, where the transmit switch is enabled to transmit a respective first signal to the antenna and disabled to prevent transmission of the first signal to the antenna. the systems and methods for the CMOS RF antenna switch may further include a receiver switch coupled to the antenna, where the receiver switch forms a filter when enabled and a resonant circuit when disabled, where the filter provides for reception of a second signal received by the antenna, and where the resonant circuit blocks reception of at least the first signal.

Systems, methods and apparatuses for complementary metal oxide semiconductor (CMOS) antenna switches using switched resonators

A SPDT or SPMT switch may include a transformer having a primary winding and a secondary winding, where a first end of the secondary winding is connected to a single pole port, where a first end of the primary winding is connected to a first throw port; a first switch having a first end and a second end, where the first end is connected to ground; and a second switch, where a second end of the secondary winding is connected to both a second end of the first switch and a first end of the second switch, where a second end of the second switch is connected to a second throw port, where the first switch controls a first communication path between the single pole port and the first throw port, and where the second switch controls a second communication path between the second throw port and the single pole port.

Systems and methods for a SPDT switch or SPMT switch with transformer

Embodiments of the invention may provide for a CMOS antenna switch, which may be referred to as a CMOS SP4T switch. The CMOS antenna switch may operate at a plurality of frequencies, perhaps around 900 MHz and 1.9 GHz according to an embodiment of the invention. The CMOS antenna switch may include both a receiver switch and a transmit switch. The receiver switch may utilize a multi-stack transistor with body substrate tuning to block high power signals from the transmit path as well as to maintain low insertion loss at the receiver path. On the other hand, in the transmit switch, a body substrate tuning technique may be applied to maintain high power delivery to the antenna. Example embodiments of the CMOS antenna switch may provide for 31 dBm P 1 dB at both bands (e.g., 900 MHz and 1.8 GHz). In addition, a 0.9 dB and &#x2212;1.1 dB insertion loss at 900 MHz and 1.9 GHz, respectively, may be obtained according to example embodiments of the invention.

Systems, methods, and apparatuses for complementary metal oxide semiconductor (CMOS) antenna switches using body switching in multistacking structure

Embodiments of the invention may provide for a CMOS antenna switch, which may be referred to as a CMOS SPDT switch. The CMOS antenna switch may operate at a plurality of frequencies, perhaps around 900 MHz 1.9 GHz and 2.1 GHz according to an embodiment of the invention. The CMOS antenna switch may include both a receiver switch and a transmit switch. The receiver switch may utilize a multi-stack transistor with body substrate switching and source and body connection along with body floating technique to block high power signals from the transmit path by preventing channel formation of the device in OFF state as well as to maintain low insertion loss at the receiver path. Example embodiments of the CMOS antenna switch may provide for 35 dBm P 1 dB at both bands (e.g., 900 MHz and 1.9 GHz and 2.1 GHz). In addition, a &#x2212;60 dBc second and third harmonic up to 28 dBm input power to the switch, may be obtained according to example embodiments of the invention.

Systems, methods, and apparatuses for high power complementary metal oxide semiconductor (CMOS) antenna switches using body switching and substrate junction diode controlling in multistacking structure

Embodiments of the invention may provide for a CMOS antenna switch, which may be referred to as a CMOS SPDT switch. The CMOS antenna switch may operate at a plurality of frequencies, perhaps around 900 MHz, 1.9 GHz and 2.1 GHz according to an embodiment of the invention. The CMOS antenna switch may include both a receiver switch and a transmit switch. The receiver switch may utilize a multi-stack transistor with body substrate switching and attachment of external capacitor between drain and gate to block high power signals from the transmit path as well as to maintain low insertion loss at the receiver path. Exemplary embodiments of the CMOS antenna switch may provide for 38 dBm P 0.1 dB at multi bands (e.g., 900 MHz, 1.8 GHz, and 2.1 GHz). In addition, &#x2212;60 dBc second and third harmonic performance up to 30 dBm input, may be obtained according to example embodiments of the invention.

Systems, methods and apparatuses for high power complementary metal oxide semiconductor (CMOS) antenna switches using body switching and external component in multi-stacking structure

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Atlanta, GA, United States of America

Minsik Ahn