The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 29, 2013

Filed:

May. 04, 2010
Applicants:

Minsik Ahn, Atlanta, GA (US);

Chang-ho Lee, Marietta, GA (US);

Inventors:

Minsik Ahn, Atlanta, GA (US);

Chang-Ho Lee, Marietta, GA (US);

Assignee:

Samsung Electro-Mechanics, Gyunngi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01Q 1/50 (2006.01); H04B 1/44 (2006.01); H01P 1/15 (2006.01);
U.S. Cl.
CPC ...
Abstract

Example embodiments of the invention are directed to CMOS differential antenna switches with multi-section impedance transformation. The differential architecture can provide relief from large voltage swings of the power amplifiers by distributing the voltage stress over the receiver switch with two of the identical or substantially similar single-ended switches. In order to reduce the voltage stress further, multi-section impedance transformations can be used. Degraded insertion loss due to the impedance transformation technique can be compensated by selecting an optimal impedance for the antenna switch operation. Accordingly, the use of the multi-section impedance transformations with the differential antenna switch architecture enables high power handling capability for the antenna switch with acceptable efficiency for the transmitter module.


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