The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 04, 2018

Filed:

Sep. 21, 2016
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Woonyun Kim, San Diego, CA (US);

Chang-Ho Lee, San Diego, CA (US);

Minsik Ahn, San Diego, CA (US);

Jeongwon Cha, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/04 (2006.01); H03F 3/45 (2006.01); H03F 3/193 (2006.01); H03F 1/02 (2006.01); H03F 3/24 (2006.01);
U.S. Cl.
CPC ...
H03F 3/45179 (2013.01); H03F 1/0266 (2013.01); H03F 3/193 (2013.01); H03F 3/245 (2013.01); H03F 3/45188 (2013.01); H03F 2200/165 (2013.01); H03F 2200/168 (2013.01); H03F 2200/18 (2013.01); H03F 2200/294 (2013.01); H03F 2200/336 (2013.01); H03F 2200/451 (2013.01); H03F 2203/45244 (2013.01);
Abstract

A circuit includes a first transistor comprising a gate, a source, and a drain, and an inductor coupled between the gate and the source of the first transistor, wherein the source is further coupled to a current source and the gate is further coupled to an amplifier.


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