The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2010
Filed:
Sep. 14, 2007
Minsik Ahn, Atlanta, GA (US);
Chang-ho Lee, Marietta, GA (US);
Jaejoon Chang, Duluth, GA (US);
Wangmyong Woo, Cumming, GA (US);
Haksun Kim, Daejeon, KR;
Joy Laskar, Marietta, GA (US);
Minsik Ahn, Atlanta, GA (US);
Chang-Ho Lee, Marietta, GA (US);
Jaejoon Chang, Duluth, GA (US);
Wangmyong Woo, Cumming, GA (US);
Haksun Kim, Daejeon, KR;
Joy Laskar, Marietta, GA (US);
Samsung Electro-Mechanics, , KR;
Georgia Tech Research Corporation, Atlanta, GA (US);
Abstract
Embodiments of the invention may provide for a CMOS antenna switch, which may be referred to as a CMOS SPDT switch. The CMOS antenna switch may operate at a plurality of frequencies, perhaps around 900 MHz, 1.9 GHz and 2.1 GHz according to an embodiment of the invention. The CMOS antenna switch may include both a receiver switch and a transmit switch. The receiver switch may utilize a multi-stack transistor with body substrate switching and attachment of external capacitor between drain and gate to block high power signals from the transmit path as well as to maintain low insertion loss at the receiver path. Exemplary embodiments of the CMOS antenna switch may provide for 38 dBm P 0.1 dB at multi bands (e.g., 900 MHz, 1.8 GHz, and 2.1 GHz). In addition, −60 dBc second and third harmonic performance up to 30 dBm input, may be obtained according to example embodiments of the invention.