The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2011
Filed:
Sep. 18, 2007
Minsik Ahn, Atlanta, GA (US);
Chang-ho Lee, Marietta, GA (US);
Changhyuk Cho, Roswell, GA (US);
Jaejoon Chang, Duluth, GA (US);
Wangmyong Woo, Cumming, GA (US);
Haksun Kim, Daejeon, KR;
Joy Laskar, Marietta, GA (US);
Minsik Ahn, Atlanta, GA (US);
Chang-Ho Lee, Marietta, GA (US);
Changhyuk Cho, Roswell, GA (US);
Jaejoon Chang, Duluth, GA (US);
Wangmyong Woo, Cumming, GA (US);
Haksun Kim, Daejeon, KR;
Joy Laskar, Marietta, GA (US);
Samsung Electro-Mechanics, , KR;
Georgia Tech Research Corporation, Atlanta, GA (US);
Abstract
Embodiments of the invention may provide for a CMOS antenna switch, which may be referred to as a CMOS SP4T switch. The CMOS antenna switch may operate at a plurality of frequencies, perhaps around 900 MHz and 1.9 GHz according to an embodiment of the invention. The CMOS antenna switch may include both a receiver switch and a transmit switch. The receiver switch may utilize a multi-stack transistor with body substrate tuning to block high power signals from the transmit path as well as to maintain low insertion loss at the receiver path. On the other hand, in the transmit switch, a body substrate tuning technique may be applied to maintain high power delivery to the antenna. Example embodiments of the CMOS antenna switch may provide for 31 dBm P 1 dB at both bands (e.g., 900 MHz and 1.8 GHz). In addition, a 0.9 dB and −1.1 dB insertion loss at 900 MHz and 1.9 GHz, respectively, may be obtained according to example embodiments of the invention.