Hwaseong, South Korea

Minkyung Bae

This inventor holds 7 USPTO granted patents and 2 published patent applications. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2021-2025.

USPTO Granted Patents = 7 

% Patents Active = 100.0

Average Co-Inventor Count = 4.1

ph-index = 2

Forward Citations = 7(Granted Patents)


Location History:

  • Suwon-si, KR (2021)
  • Hwaseong-si, KR (2021 - 2023)

Company Filing History:


Years Active: 2021-2025

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7 patents (USPTO):Explore Patents

Title: Minkyung Bae: Innovator in Vertical Semiconductor Technology

Introduction

Minkyung Bae is a prominent inventor based in Hwaseong, South Korea. She has made significant contributions to the field of semiconductor technology, particularly in the development of vertical non-volatile memory devices. With a total of 7 patents to her name, Bae continues to push the boundaries of innovation in her field.

Latest Patents

One of her latest patents involves a vertical non-volatile memory device. This device features a memory stack structure that includes gate lines and interlayer insulating layers, along with a channel hole extending in a stacking direction. The channel layer is designed to extend within this channel hole, and the information storage structure consists of a composite blocking insulating layer, a charge storage layer, and a tunneling insulating layer arranged horizontally from the gate lines to the channel layer. Notably, the composite blocking insulating layer incorporates a metal oxide with a higher dielectric constant than silicon oxide, enhancing the device's performance.

Another significant patent is related to the method of fabricating a vertical semiconductor device. This invention includes a common source semiconductor layer on a substrate, with a support layer positioned above it. Gates and interlayer insulating layers are alternately stacked on the support layer, while a channel pattern extends in a direction perpendicular to the substrate's upper surface. The information storage layer is strategically placed between the gates and the channel pattern, ensuring efficient functionality.

Career Highlights

Minkyung Bae is currently employed at Samsung Electronics Co., Ltd., where she continues to innovate and develop cutting-edge technologies. Her work has garnered attention in the semiconductor industry, and she is recognized for her expertise in vertical memory devices.

Collaborations

Throughout her career, Bae has collaborated with notable colleagues, including Bongyong Lee and Doohee Hwang. These partnerships have contributed to her success and the advancement of technology in her field.

Conclusion

Minkyung Bae is a trailblazer in the realm of vertical semiconductor technology. Her innovative patents and contributions to Samsung Electronics Co., Ltd. highlight her role as a leading inventor in the industry. With her ongoing work, Bae is poised to continue making significant advancements in semiconductor technology.

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