The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 04, 2021

Filed:

Aug. 09, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Bongyong Lee, Suwon-si, KR;

Minkyung Bae, Hwaseong-si, KR;

Myunghun Woo, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 27/11565 (2017.01); H01L 23/522 (2006.01); H01L 21/225 (2006.01); H01L 21/3205 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 23/5226 (2013.01); H01L 27/11565 (2013.01); H01L 21/2257 (2013.01); H01L 21/32055 (2013.01);
Abstract

A three-dimensional semiconductor memory device may include a stack including gate electrodes sequentially stacked on a substrate and a vertical structure penetrating the stack. The vertical structure may include a vertical channel portion, a charge storing structure on an outer side surface of the vertical channel portion, and a pad. The pad may include a first pad portion disposed in an internal space surrounded by the vertical channel portion and a second pad portion provided on the first pad portion and extended onto a top surface of the charge storing structure. A portion of the first pad portion may be disposed at the same level as an uppermost electrode of the gate electrodes.


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