Nonvolatile memory device, an operating method thereof, and a storage system including the nonvolatile memory device

Abstract

An operating method of a nonvolatile memory device which includes a cell string including a plurality of cell transistors connected in series between a bit line and a common source line and stacked in a direction perpendicular to a substrate, the method including: programming an erase control transistor of the plurality of cell transistors; and after the erase control transistor is programmed, applying an erase voltage to the common source line or the bit line and applying an erase control voltage to an erase control line connected to the erase control transistor, wherein the erase control voltage is less than the erase voltage and greater than a ground voltage, and wherein the erase control transistor is between a ground selection transistor of the plurality of cell transistors and the common source line or between a string selection transistor of the plurality of cell transistors and the bit line.