Hsinchu, Taiwan

Ming-Shan Lo


Average Co-Inventor Count = 3.0

ph-index = 3

Forward Citations = 59(Granted Patents)


Location History:

  • Hsinchu, TW (2016 - 2020)
  • Hsinchu County, TW (2020)

Company Filing History:


Years Active: 2016-2020

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6 patents (USPTO):Explore Patents

Title: Innovations of Ming-Shan Lo

Introduction

Ming-Shan Lo is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of memory devices, holding a total of 6 patents. His work focuses on advancing technology in nonvolatile memory cells and their manufacturing methods.

Latest Patents

One of his latest patents is titled "Memory device and manufacturing method thereof." This invention provides a memory device that includes a first gate structure, a second gate structure, an oxide layer, and a nitride layer. The first and second gate structures are positioned on a substrate, with the oxide layer covering the first gate structure. The nitride layer is placed on the substrate, covering both the oxide and the second gate structure. Notably, the refraction index of a portion of the nitride layer adjacent to the interface between the nitride layer and each gate structure is about 5% to 10% less than that of the remaining portion of the nitride layer.

Another significant patent is the "Method of programming nonvolatile memory cell." This method involves a nonvolatile memory cell that includes a substrate, a select transistor, a following gate transistor, and an anti-fuse transistor, all coupled in series. The programming method applies a variable DC voltage source to the nonvolatile memory cell, which includes at least one high voltage part for forming a trapping path within the first gate oxide layer and at least one low voltage part for crystallizing the trapping path into a silicon filament.

Career Highlights

Ming-Shan Lo is currently associated with Ememory Technology Inc., where he continues to innovate in the field of memory technology. His work has been instrumental in developing advanced memory solutions that enhance performance and efficiency.

Collaborations

He has collaborated with notable coworkers, including Yi-Hung Li and Yen-Hsin Lai, contributing to various projects that push the boundaries of memory technology.

Conclusion

Ming-Shan Lo's contributions to the field of memory devices and his innovative patents highlight his role as a leading inventor in the technology sector. His work continues to influence advancements in nonvolatile memory technology.

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