The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2020

Filed:

Feb. 27, 2019
Applicant:

Ememory Technology Inc., Hsinchu, TW;

Inventors:

Yen-Ting Chen, Hsinchu County, TW;

Ming-Shan Lo, Hsinchu County, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); G11C 7/06 (2006.01); G11C 7/12 (2006.01); G11C 5/14 (2006.01); G11C 17/16 (2006.01); G11C 17/18 (2006.01); H01L 21/28 (2006.01); H01L 27/11517 (2017.01); G11C 7/08 (2006.01); H01L 21/02 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/408 (2013.01); G11C 5/147 (2013.01); G11C 7/065 (2013.01); G11C 7/08 (2013.01); G11C 7/12 (2013.01); G11C 17/16 (2013.01); G11C 17/18 (2013.01); H01L 21/022 (2013.01); H01L 21/0217 (2013.01); H01L 21/0226 (2013.01); H01L 21/02107 (2013.01); H01L 21/02109 (2013.01); H01L 21/02112 (2013.01); H01L 21/02225 (2013.01); H01L 21/02247 (2013.01); H01L 21/28202 (2013.01); H01L 27/11517 (2013.01); H01L 29/0603 (2013.01); H01L 29/0607 (2013.01); H01L 29/0638 (2013.01); H01L 29/40114 (2019.08); H01L 29/40117 (2019.08);
Abstract

A memory device and a manufacturing method thereof are provided. The memory device includes a first gate structure, a second gate structure, an oxide layer and a nitride layer. The first gate structure and the second gate structure are disposed on a substrate. The oxide layer covers the first gate structure. The nitride layer is disposed on the substrate and covers the oxide and the second gate structure. The refraction index of a portion of the nitride layer adjacent to an interface between the nitride layer and each of the first gate structure and the second gate structure is about 5% to 10% less than the refraction index of the remaining portion of the nitride layer.


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