The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2019
Filed:
Mar. 22, 2017
Applicant:
Ememory Technology Inc., Hsinchu, TW;
Inventors:
Assignee:
eMemory Technology Inc., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11524 (2017.01); H01L 23/31 (2006.01); H01L 23/528 (2006.01); H01L 29/06 (2006.01); H01L 29/49 (2006.01); G11C 7/14 (2006.01); G11C 16/28 (2006.01); G11C 16/10 (2006.01); G11C 16/30 (2006.01); G11C 16/34 (2006.01); G11C 29/02 (2006.01); G11C 5/14 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11524 (2013.01); G11C 5/145 (2013.01); G11C 7/14 (2013.01); G11C 16/10 (2013.01); G11C 16/28 (2013.01); G11C 16/30 (2013.01); G11C 16/3459 (2013.01); G11C 29/021 (2013.01); G11C 29/028 (2013.01); H01L 23/3171 (2013.01); H01L 23/528 (2013.01); H01L 29/0649 (2013.01); H01L 29/4916 (2013.01); H01L 29/4975 (2013.01);
Abstract
A non-volatile memory including memory cells is provided. Each of the memory cells includes a substrate, a floating gate structure, a select gate structure, and a first doped region. The floating gate structure is disposed on the substrate. The select gate structure is disposed on the substrate and located at one side of the floating gate structure. The first doped region is disposed in the substrate at another side of the floating gate structure. The first doped regions between two adjacent memory cells are adjacent to one another and separated from one another.