Yi-Hung Li

Title: Yi-Hung Li: Innovator in Non-Volatile Memory Technology

Introduction

Yi-Hung Li is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of non-volatile memory technology, holding a total of 3 patents. His work focuses on enhancing memory cell structures, which are crucial for modern electronic devices.

Latest Patents

One of Yi-Hung Li's latest patents involves a non-volatile memory that includes memory cells. Each memory cell consists of a substrate, a floating gate structure, a select gate structure, and a first doped region. The floating gate structure is positioned on the substrate, while the select gate structure is located on one side of the floating gate structure. The first doped region is situated in the substrate on the opposite side of the floating gate structure. Notably, the first doped regions between adjacent memory cells are adjacent to each other yet remain separated.

Another significant patent is for a single-poly nonvolatile memory (NVM) cell. This cell features a PMOS select transistor on a semiconductor substrate, along with a PMOS floating gate transistor that is series-connected to the PMOS select transistor. The PMOS floating gate transistor includes a floating gate and a gate oxide layer that lies between the floating gate and the semiconductor substrate. A protector oxide layer covers the floating gate, ensuring indirect contact, while a contact etch stop layer is placed on the protector oxide layer, isolating the floating gate from it.

Career Highlights

Yi-Hung Li is currently employed at Ememory Technology Inc., where he continues to innovate in the field of memory technology. His expertise and contributions have positioned him as a key figure in the development of advanced memory solutions.

Collaborations

Throughout his career, Yi-Hung Li has collaborated with notable colleagues, including Ming-Shan Lo and Yen-Hsin Lai. These partnerships have fostered a collaborative environment that enhances innovation and drives technological advancements.

Conclusion

Yi-Hung Li's work in non-volatile memory technology exemplifies his commitment to innovation and excellence. His patents reflect a deep understanding of memory cell structures, contributing to the advancement of electronic devices. His ongoing efforts at Ememory Technology Inc. continue to shape the future of memory technology.