Ming Li

This inventor holds 15 USPTO granted patents, primarily in Semiconductor Devices. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2007-2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ming Li. Retrieved from https://idiyas.com/inventor/ming-li-vvvacorb

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 15

% Patents Active = 80.0

Average Co-Inventor Count = 3.0

ph-index = 8

Forward Citations = 377(Granted Patents)

Location History:

Yongin, KR (2007 - 2008)
Suwon-si, KR (2009 - 2012)
Gyeonggi-do, KR (2008 - 2013)
Yongin-Si, KR (2008 - 2014)

Company Filing History:

15 out of 132,108

Samsung Electronics Co., Ltd.

patents

Years Active: 2007-2014

Loading Chart...

Areas of Expertise:

Semiconductor Devices

Field Effect Transistor

Single Electron Transistor

Integrated Circuit

Depletion Barrier Layer

Nano-Wire Channels

Multi Bridge Channel

Fabrication Methods

Active Layer Pattern

Support Structure

Wire Channels

Fin Field Transistors

15 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8815702 - Methods of manufacturing semiconductor devices having a support structure for an active layer pattern (2014-08-26),

2. 8680588 - Field effect transistor with buried gate pattern (2014-03-25),

3. 8426901 - Semiconductor devices having a support structure for an active layer pattern (2013-04-23),

4. 8124961 - Single electron transistor (2012-02-28),

5. 8008141 - Method of fabricating a semiconductor device with multiple channels (2011-08-30),

6. 7989854 - Semiconductor devices having a support structure for an active layer pattern (2011-08-02),

7. 7955932 - Single electron transistor and method of manufacturing the same (2011-06-07),

8. 7858457 - Methods of forming integrated circuit devices including a depletion barrier layer at source/drain regions (2010-12-28),

9. 7579657 - Semiconductor device with multiple channels (2009-08-25),

10. 7427788 - Multi bridge channel field effect transistors with nano-wire channels and methods of manufacturing the same (2008-09-23),

11. 7396730 - Integrated circuit devices including an L-shaped depletion barrier layer adjacent opposite sides of a gate pattern and methods of forming the same (2008-07-08),

12. 7374986 - Method of fabricating field effect transistor (FET) having wire channels (2008-05-20),

13. 7361545 - Field effect transistor with buried gate pattern (2008-04-22),

14. 7332386 - Methods of fabricating fin field transistors (2008-02-19),

15. 7274051 - Field effect transistor (FET) having wire channels and method of fabricating the same (2007-09-25),

Title: The Innovations of Inventor Ming Li

Introduction

Ming Li is a prominent inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 15 patents. His work focuses on advancing the manufacturing processes of semiconductor devices, which are crucial for modern electronics.

Latest Patents

Ming Li's latest patents include innovative methods for manufacturing semiconductor devices that feature a support structure for an active layer pattern. These semiconductor devices consist of a semiconductor substrate with a stack structure that protrudes from the substrate and is surrounded by an isolation structure. The stack structure incorporates an active layer pattern and a gap-filling insulation layer, enhancing the device's performance. Another notable patent involves a field effect transistor that includes a buried gate pattern, which is electrically isolated by a tunneling insulating film. This design allows for efficient storage of charge carriers, improving the overall functionality of the transistor.

Career Highlights

Ming Li is currently employed at Samsung Electronics Co., Ltd., where he continues to push the boundaries of semiconductor technology. His expertise and innovative approach have positioned him as a key player in the industry, contributing to the development of cutting-edge electronic devices.

Collaborations

Ming Li has collaborated with several talented individuals in his field, including Chang-Woo Oh and Kyoung-hwan Yeo. These collaborations have fostered a creative environment that encourages the exchange of ideas and advancements in technology.

Conclusion

Ming Li's contributions to semiconductor technology through his patents and collaborations highlight his importance as an inventor in the field. His work continues to influence the development of modern electronic devices, showcasing the impact of innovation in technology.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]