The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2011
Filed:
Jul. 15, 2009
Ming LI, Suwon-si, KR;
Kyoung-hwan Yeo, Seoul, KR;
Sung-min Kim, Incheon, KR;
Sung-dae Suk, Seoul, KR;
Dong-won Kim, Seongnam-si, KR;
Ming Li, Suwon-si, KR;
Kyoung-hwan Yeo, Seoul, KR;
Sung-min Kim, Incheon, KR;
Sung-dae Suk, Seoul, KR;
Dong-won Kim, Seongnam-si, KR;
Abstract
A semiconductor device with multiple channels includes a semiconductor substrate and a pair of conductive regions spaced apart from each other on the semiconductor substrate and having sidewalls that face to each other. A partial insulation layer is disposed on the semiconductor substrate between the conductive regions. A channel layer in the form of at least two bridges contacts the partial insulation layer, the at least two bridges being spaced apart from each other in a first direction and connecting the conductive regions with each other in a second direction that is at an angle relative to the first direction. A gate insulation layer is on the channel layer, and a gate electrode layer on the gate insulation layer and surrounding a portion of the channel layer.