The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2011
Filed:
Oct. 03, 2007
Sung-dae Suk, Seoul, KR;
Kyoung-hwan Yeo, Seoul, KR;
Ming LI, Suwon-si, KR;
Yun-young Yeoh, Seoul, KR;
Sung-Dae Suk, Seoul, KR;
Kyoung-Hwan Yeo, Seoul, KR;
Ming Li, Suwon-si, KR;
Yun-Young Yeoh, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A single electron transistor includes source/drain layers disposed apart on a substrate, at least one nanowire channel connecting the source/drain layers, a plurality of oxide channel areas in the nanowire channel, the oxide channel areas insulating at least one portion of the nanowire channel, a quantum dot in the portion of the nanowire channel insulated by the plurality of oxide channel areas, and a gate electrode surrounding the quantum dot.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile