The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2008
Filed:
Sep. 30, 2005
Ming LI, Yongin-Si, KR;
Dong-uk Choi, Hwaseong-Si, KR;
Chang-woo OH, Suwon-Si, KR;
Dong-won Kim, Seongnam-Si, KR;
Min-sang Kim, Seoul, KR;
Sung-hwan Kim, Suwon-Si, KR;
Kyoung-hwan Yeo, Seoul, KR;
Ming Li, Yongin-Si, KR;
Dong-Uk Choi, Hwaseong-Si, KR;
Chang-Woo Oh, Suwon-Si, KR;
Dong-Won Kim, Seongnam-Si, KR;
Min-Sang Kim, Seoul, KR;
Sung-Hwan Kim, Suwon-Si, KR;
Kyoung-Hwan Yeo, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A field effect transistor includes a buried gate pattern that is electrically isolated by being surrounded by a tunneling insulating film. The field effect transistor also includes a channel region that is floated by source and drain regions, a gate insulating film, and the tunneling insulating film. The buried gate pattern and the tunneling insulating film extend into the source and drain regions. Thus, the field effect transistor efficiently stores charge carriers in the buried gate pattern and the floating channel region.