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For the Inventor, By the Inventor

Qingdao, China

Min-Hwa Chi

USPTO Granted Patents = 17 

Average Co-Inventor Count = 3.3

ph-index = 1


Company Filing History:

goldMedal17 out of 23 
 
Sien (qingdao) Integrated Circuits Co., Ltd
 patents

Years Active: 2022-2025

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17 patents (USPTO):Explore Patents
1. 12243773 - Liner and barrier layer in dual damascene cu interconnect for enhanced EM and process (2025-03-04),
2. 12183795 - Notch shape of trench gate bottom corner for better breakdown voltage of power MOSFET and IGBT with good trade off to ron and ox reliability (2024-12-31),
3. 12154944 - Super junction power device (2024-11-26),
4. 12154943 - Super junction power device and method of making the same (2024-11-26),
5. 12148793 - High voltage semiconductor device comprising a combined junction terminal protection structure with a ferroelectric material (2024-11-19),
6. 12136647 - Super junction power device and method of making the same (2024-11-05),
7. 12131946 - Method to form contacts with multiple depth by enhanced CESL (2024-10-29),
8. 12094873 - SiGe HBT with graphene extrinsic base and methods (2024-09-17),
9. 11984500 - Structure and method of new power MOS and IGBT with built-in multiple VT'S (2024-05-14),
10. 11978702 - Simultaneous self-forming hea barrier and Cu seeding layers for Cu interconnect (2024-05-07),
11. 11862674 - High voltage semiconductor device comprising a combined junction terminal protection structure with a ferroelectric material and method of making the same (2024-01-02),
12. 11834754 - ALD method with multi-chambers for sic or multi-elements epitaxial growth (2023-12-05),
13. 11715758 - Super junction power device and method of making the same (2023-08-01),
14. 11677019 - IGBT device with narrow mesa and manufacture thereof (2023-06-13),
15. 11594631 - LDMOS transistor and manufacture thereof (2023-02-28),

Title: Innovations of Min-Hwa Chi

Introduction

Min-Hwa Chi is a prominent inventor based in Qingdao, China. He has made significant contributions to the field of integrated circuits, holding a total of 17 patents. His work focuses on enhancing the performance and reliability of electronic components.

Latest Patents

One of his latest patents involves a liner and barrier layer in dual damascene copper interconnects for enhanced electromigration and process efficiency. This invention provides a method for forming a copper interconnect using a damascene process, which includes a barrier layer that enhances adhesion and inhibits copper diffusion. The barrier layer can consist of a metal crystal adhesion layer or a graphene layer, both of which contribute to lower resistance and improved performance.

Another notable patent addresses the notch shape of trench gate bottom corners for better breakdown voltage in power MOSFETs and IGBTs. This invention simplifies the device structure while ensuring good breakdown voltages and maintaining on-state resistance and oxide reliability.

Career Highlights

Min-Hwa Chi is currently employed at Sien (Qingdao) Integrated Circuits Co., Ltd. His innovative work has positioned him as a key figure in the development of advanced electronic components. His patents reflect a deep understanding of material science and engineering principles.

Collaborations

He has collaborated with notable colleagues, including Conghui Liu and Richard Ru-Gin Chang, to further advance the field of integrated circuits.

Conclusion

Min-Hwa Chi's contributions to the field of integrated circuits through his innovative patents demonstrate his expertise and commitment to enhancing electronic technology. His work continues to influence the industry and pave the way for future advancements.

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