The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2024
Filed:
Mar. 29, 2022
Applicant:
Sien (Qingdao) Integrated Circuits Co., Ltd., Shandong, CN;
Inventors:
Assignee:
SiEn (QingDao) Integrated Circuits Co., Ltd., Qingdao, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4236 (2013.01); H01L 29/401 (2013.01); H01L 29/7397 (2013.01); H01L 29/7813 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H01L 29/66068 (2013.01); H01L 29/66348 (2013.01); H01L 29/66522 (2013.01); H01L 29/66734 (2013.01);
Abstract
The present invention provides a device having a trench gate structure and a method of making the same. The device comprises a substrate, a drift region, a well region, a trench gate, a heavily-doped region, and an electrode positioned on the heavily-doped region. The structure of the device is simple to provide good VDMOS and IGBT breakdown voltages, and meanwhile take on-state resistance and reliability of oxide into account.