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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11677019 B1

PDFFull Text
Date of Patent:
Jun. 13, 2023

Filed:

Jun. 15, 2021

Igbt device with narrow mesa and manufacture thereof

Applicant:

Sien (Qingdao) Integrated Circuits Co., Ltd., Shandong, CN;

Inventors:

Min-Hwa Chi, Qingdao, CN;

Ching-Ju Lin, Qingdao, CN;

Ying-Tsung Wu, Qingdao, CN;

Conghui Liu, Qingdao, CN;

Longkang Yang, Qingdao, CN;

Huan Wang, Qingdao, CN;

Richard Ru-Gin Chang, Qingdao, CN;

Assignee:

SiEn (QingDao) Integrated Circuits Co., Ltd., Qingdao, CN;

Attorney:

Chen Yoshimura LLP

Primary Examiner:

Igwe U Anya

Int. Cl.
CPC ...
H01L 29/739 (2006.01); H01L 29/08 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7397 (2013.01); H01L 29/0649 (2013.01); H01L 29/0804 (2013.01); H01L 29/66348 (2013.01);
Abstract

The present application provides an insulated gate bipolar transistor (IGBT) device with narrow mesa and a manufacture thereof. The device comprises: a semiconductor substrate; gate trench structures and emitter trench structures formed on front surface of the semiconductor substrate and alternately arranged along with horizontal direction; wherein the gate trench structures and the emitter trench structures are respectively set in pair along with the arrangement direction, and the pairs of the gate trench structures and the pairs of the emitter trench structures are set in alternate arrangement along with the arrangement direction; well regions formed between the emitter trench structures of one pair; emitter injection regions formed between the gate trench structures of one pair and between the emitter trench structures of one pair, respectively; and wherein, in the region between the emitter trench structures of the one pair, the emitter injection region is above the well region.

Find Patent Forward Citations

Chi, Min-Hwa. (2023). Igbt device with narrow mesa and manufacture thereof (U.S. Patent No. 11677019). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11677019

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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