Qingdao, China

Richard Ru-Gin Chang

This inventor holds 7 USPTO granted patents and 2 published patent applications. Top assignee: Sien (Qingdao) Integrated Circuits Co., Ltd. Active years: 2022-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Richard Ru-Gin Chang. Retrieved from https://idiyas.com/inventor/richard-ru-gin-chang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 7 

% Patents Active = 100.0

Average Co-Inventor Count = 3.4

ph-index = 1


Company Filing History:


Years Active: 2022-2024

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7 patents (USPTO):Explore Patents

Title: Richard Ru-Gin Chang: Innovator in High Voltage Semiconductor Technology

Introduction

Richard Ru-Gin Chang is a prominent inventor based in Qingdao, China, known for his significant contributions to the field of semiconductor devices. With a total of seven patents to his name, Chang has established himself as a leading figure in the development of high voltage semiconductor technologies that enhance device performance and efficiency.

Latest Patents

Chang's latest innovations include two notable patents. The first, titled "High Voltage Semiconductor Device Comprising a Combined Junction Terminal Protection Structure with a Ferroelectric Material," presents a ground-breaking design that incorporates a combined junction terminal protection structure. This invention features an active area formed with a high voltage semiconductor device, along with a RESURF (Reduced Surface Field) structure. The incorporation of a ferroelectric material layer within the device significantly improves the breakdown voltage (BV) while efficiently reducing on-resistance (Ron). This advancement allows for easier miniaturization of the device structure using common deposition and patterning processes.

The second patent, "Super Junction Power Device and Method of Making the Same," describes a power device with a super junction structure. This inventive method simplifies the manufacturing process and reduces costs while enhancing yield and reliability. By utilizing a charge sharing effect within the device, both Miller capacitance and input capacitance are minimized, leading to lower on-state resistance. Notably, this patent also addresses an increase in the withstand voltage within the termination region.

Career Highlights

Currently, Richard Ru-Gin Chang is affiliated with Sien (Qingdao) Integrated Circuits Co., Ltd., where he continues to push the boundaries of semiconductor technology. His career is marked by a strong commitment to innovation and excellence, with his patents reflecting a deep understanding of semiconductor principles and applications.

Collaborations

Chang has worked alongside talented colleagues, including Min-Hwa Chi and Longkang Yang. These collaborative efforts have fostered an environment conducive to creativity and technological advancement, enabling them to tackle complex challenges in semiconductor design and manufacturing.

Conclusion

Richard Ru-Gin Chang's innovative contributions to the semiconductor industry exemplify the spirit of advancement vital to the field. With multiple patents highlighting his expertise, Chang remains a key player in the development of high voltage semiconductor devices, paving the way for future breakthroughs and improved technologies.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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