The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2022
Filed:
Apr. 28, 2021
Sien (Qingdao) Integrated Circuits Co., Ltd., Shandong, CN;
Min-Hwa Chi, Qingdao, CN;
Longkang Yang, Qingdao, CN;
Huaihua Xu, Qingdao, CN;
Huan Wang, Qingdao, CN;
Richard Ru-Gin Chang, Qingdao, CN;
SiEn (QingDao) Integrated Circuits Co., Ltd., Qingdao, CN;
Abstract
The present invention provides a trench gate structure and a method of forming the same. The method comprises steps of forming a first trench on the surface of a substrate, a surface of a bottom of the first trench comprising a crystal face belonging to the first family of crystal faces, and a surface of a sidewall of the first trench comprising another crystal face belonging to a second family of crystal faces. With a face-selective wet etching, a specific crystal face is presented on the surface of the bottom of the trench and a thicker gate oxide layer is formed thereon after performing thermal oxidation to avoid from failure due to thinner gate oxide layer on the surface of the bottom, increase breakdown voltage, and improve reliability of the device.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile