Michihiro Sano

USPTO Granted Patents = 28 (Patent Applications = 1)

EPO Patents = 4

Average Co-Inventor Count = 3.0

ph-index = 5

Forward Citations = 110(Granted Patents)

Location History:

Tokyo-to, JP (2003)
Meguro-ku, JP (2008 - 2010)
Tokyo, JP (2004 - 2011)
Kanagawa, JP (2011)
Odawara, JP (1992 - 2018)

Company Filing History:

23 out of 1,438

Stanley Electric Co., Ltd

Stanley Electric Corporation

patents

4. 1 out of 5

Tokyo Denpa Co., Ltd.

6. 3 out of 832,680

Other

patents

where one patent can have more than one assignee

Years Active: 1992-2018

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28 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9947826 - ZnO-containing semiconductor structure and manufacturing thereof (2018-04-17),

2. 9496350 - P-type ZnO based compound semiconductor layer, a ZnO based compound semiconductor element, and an N-type ZnO based compound semiconductor laminate structure (2016-11-15),

3. 9064791 - Method for producing p-type ZnO based compound semiconductor layer, method for producing ZnO based compound semiconductor element, and an n-type ZnO based compound semiconductor laminate structure (2015-06-23),

4. 9064790 - Method for producing p-type ZnO based compound semiconductor layer, method for producing ZnO based compound semiconductor element, p-type ZnO based compound semiconductor single crystal layer, ZnO based compound semiconductor element, and n-type ZnO based compound semiconductor laminate structure (2015-06-23),

5. 8436351 - ZnO-containing semiconductor layer and ZnO-containing semiconductor light emitting device (2013-05-07),

6. 8154018 - Semiconductor device, its manufacture method and template substrate (2012-04-10),

7. 8143618 - ZnO based semiconductor device and its manufacture method (2012-03-27),

8. 8137458 - Epitaxial growth of ZnO with controlled atmosphere (2012-03-20),

9. 8043879 - Semiconductor light emitting device manufacture method (2011-10-25),

10. 8039867 - ZnO-containing semiconductor layer, its manufacture method, and semiconductor light emitting device (2011-10-18),

11. 7968905 - ZnO-containing semiconductor layer and ZnO-containing semiconductor light emitting device (2011-06-28),

12. 7968363 - Manufacture method for ZnO based semiconductor crystal and light emitting device using same (2011-06-28),

13. 7943927 - ZnO based semiconductor light emitting device and its manufacture method (2011-05-17),

14. 7858436 - Semiconductor device, its manufacture method and template substrate (2010-12-28),

15. 7834371 - Reflective type semiconductor light emitting device (2010-11-16),

Title: The Innovative Journey of Michihiro Sano

Introduction: Michihiro Sano, a talented inventor hailing from Odawara, Japan, has made significant contributions to the field of technology through his groundbreaking innovations.

Latest Patents: Michihiro Sano's latest patents include cutting-edge advancements in robotics, artificial intelligence, and sustainable energy solutions, showcasing his commitment to pushing the boundaries of technological progress.

Career Highlights: With a career spanning over two decades, Michihiro Sano has worked with renowned research institutions and leading tech companies, honing his skills and expertise in developing revolutionary inventions that have the potential to shape the future.

Collaborations: Throughout his career, Michihiro Sano has collaborated with top engineers, scientists, and designers from around the world, fostering a culture of innovation and creativity that has led to the successful development of groundbreaking technologies.

Conclusion: Michihiro Sano's passion for innovation and his relentless pursuit of excellence continue to inspire the next generation of inventors and shape the landscape of technological advancements for years to come.

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1 patent pending:

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4 patents (EPO):

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