The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2016
Filed:
Apr. 14, 2015
Applicant:
Stanley Electric Co., Ltd., Tokyo, JP;
Inventors:
Assignee:
STANLEY ELECTRIC CO., LTD., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/227 (2006.01); H01L 29/36 (2006.01); H01L 21/02 (2006.01); H01L 29/12 (2006.01); H01L 29/22 (2006.01);
U.S. Cl.
CPC ...
H01L 29/227 (2013.01); H01L 21/02554 (2013.01); H01L 21/02565 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 21/02631 (2013.01); H01L 21/02664 (2013.01); H01L 29/12 (2013.01); H01L 29/22 (2013.01); H01L 29/36 (2013.01);
Abstract
A p-type ZnO based compound semiconductor single crystal layer, wherein the layer includes a p-type ZnO based compound semiconductor single crystal layer co-doped with (i) a Group 11 element which is Cu and/or Ag and (ii) at least one Group 13 element selected from the group consisting of B, Ga, Al, and In, and a concentration of the Group 11 element [11] and a concentration of the Group 13 element [13] fulfill the relation: 0.9≦[11]/[13]<100.