The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2011
Filed:
Jul. 13, 2009
Akio Ogawa, Yamato, JP;
Michihiro Sano, Odawara, JP;
Hiroyuki Kato, Yokohama, JP;
Hiroshi Kotani, Yokohama, JP;
Tomofumi Yamamuro, Kawasaki, JP;
Akio Ogawa, Yamato, JP;
Michihiro Sano, Odawara, JP;
Hiroyuki Kato, Yokohama, JP;
Hiroshi Kotani, Yokohama, JP;
Tomofumi Yamamuro, Kawasaki, JP;
Stanley Electric Co., Ltd., Tokyo, JP;
Abstract
A ZnO based semiconductor light emitting device includes: a first semiconductor layer containing ZnOS; a second semiconductor layer formed above the first semiconductor layer and containing ZnOS; and a third semiconductor layer formed above the second semiconductor layer and containing ZnOS, wherein an S composition x1 of the first semiconductor layer, an S composition x2 of the second semiconductor layer and an S composition x3 of the third semiconductor layer are so selected that an energy of the second semiconductor layer at the lower end of a conduction band becomes lower than both energies of the first and third semiconductor layers at the lower end of the conduction bands, and that an energy of the second semiconductor layer at the upper end of a valence band becomes higher than both energies of the first and third semiconductor layers at the upper end of the valence bands.