The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 27, 2012

Filed:

Feb. 17, 2009
Applicants:

Hiroshi Kotani, Yokohama, JP;

Michihiro Sano, Odawara, JP;

Hiroyuki Kato, Yokohama, JP;

Naochika Horio, Yokohama, JP;

Akio Ogawa, Yamato, JP;

Tomofumi Yamamuro, Kawasaki, JP;

Inventors:

Hiroshi Kotani, Yokohama, JP;

Michihiro Sano, Odawara, JP;

Hiroyuki Kato, Yokohama, JP;

Naochika Horio, Yokohama, JP;

Akio Ogawa, Yamato, JP;

Tomofumi Yamamuro, Kawasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A ZnO based semiconductor device includes: a lamination structure including a first semiconductor layer containing ZnO based semiconductor of a first conductivity type and a second semiconductor layer containing ZnO based semiconductor of a second conductivity type opposite to the first conductivity type, formed above the first semiconductor layer and forming a pn junction together with the first semiconductor layer; and a Zn—Si—O layer containing compound of Zn, Si and O and covering a surface exposing the pn junction of the lamination structure.


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