The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2015
Filed:
Jul. 23, 2013
Applicant:
Stanley Electric Co., Ltd., Tokyo, JP;
Inventors:
Assignee:
STANLEY ELECTRIC CO., LTD., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/16 (2006.01); H01L 29/22 (2006.01); H01L 21/02 (2006.01); H01L 29/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/22 (2013.01); H01L 21/02554 (2013.01); H01L 21/02565 (2013.01); H01L 21/02579 (2013.01); H01L 29/12 (2013.01); H01L 21/02576 (2013.01); H01L 21/02631 (2013.01); H01L 21/02664 (2013.01);
Abstract
A method for producing a p-type ZnO based compound semiconductor layer is provided. The method comprises the steps of (a) preparing an n-type single crystal ZnO based compound semiconductor structure containing a Group 11 element which is Cu and/or Ag and at least one Group 13 element selected from the group consisting of B, Ga, Al, and In, and (b) annealing the n-type single crystal ZnO based compound semiconductor structure to form the p-type ZnO based compound semiconductor layer co-doped with the Group 11 element and the Group 13 element.