Inventors with similar research interests:
Location History:
- San Jose, CA (US) (2011 - 2020)
- Campbell, CA (US) (2019 - 2024)
Company Filing History:
27 out of 4,549 
20 out of 987 
7 out of 5,313 
Years Active: 2011-2025
Areas of Expertise:
Title: Michael Grobis: Innovator in Memory Technology
Introduction: Michael Grobis, a prolific inventor based in San Jose, CA, holds an impressive portfolio of 55 patents. His contributions to the field of memory technology have been groundbreaking, particularly in the area of programmable resistance memory cells.
Latest Patents: Among his latest innovations is a patent titled "Concurrent Multi-Bit Self-Referenced Read of Programmable Resistance Memory Cells in Cross-Point Array." This invention discloses a method for concurrently accessing multiple memory cells in a cross-point memory array. It employs a forced current approach, applying a select voltage to a selected bit line while driving an access current separately through each selected word line. This advancement not only enhances bandwidth but also allows for increased efficiency in memory system design. Additionally, his patent for "Concurrent Write to Programmable Resistance Memory Cells in Cross-Point Array" builds on this concept, further improving the capabilities of cross-point memory arrays.
Career Highlights: Throughout his career, Michael has worked with reputable organizations, including SanDisk Technologies Inc. and HGST Netherlands B.V. His experience at these companies has equipped him with a wealth of knowledge and expertise in the field of memory technologies.
Collaborations: Notable collaborators in Michael's journey include talented individuals such as Michael Nicolas Albert Tran and Ward M. Parkinson. Their teamwork has contributed to the innovative advancements in memory technology that Michael is known for today.
Conclusion: Michael Grobis stands out as a leading inventor in the realm of programmable resistance memory, with numerous patents that showcase his commitment to innovation. His work not only enhances the performance of memory systems but also pushes the boundaries of technology in significant ways.