The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 07, 2024

Filed:

Sep. 24, 2021
Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Michael Nicolas Albert Tran, San Jose, CA (US);

Ward Parkinson, Boise, ID (US);

Michael Grobis, Campbell, CA (US);

Nathan Franklin, Belmont, CA (US);

Raj Ramanujan, Federal Way, WA (US);

Assignee:

SanDisk Technologies LLC, Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); G06F 11/10 (2006.01); H01L 25/065 (2023.01); H10B 61/00 (2023.01);
U.S. Cl.
CPC ...
G11C 11/1673 (2013.01); G06F 11/1068 (2013.01); G11C 11/161 (2013.01); G11C 11/1659 (2013.01); H10B 61/10 (2023.02); H01L 25/0657 (2013.01); H01L 2225/06562 (2013.01);
Abstract

Technology for reading reversible resistivity cells in a memory array when using a current-force read is disclosed. The memory cells are first read using a current-force referenced read. If the current-force referenced read is successful, then results of the current-force referenced read are returned. If the current-force referenced read is unsuccessful, then a current-force self-referenced read (SRR) is performed and results of the current-force SRR are returned. In an aspect this mixed current-force read is used for MRAM cells, which are especially challenging to read.


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