The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 17, 2024

Filed:

Oct. 02, 2020
Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Michael Grobis, Campbell, CA (US);

Michael Nicolas Albert Tran, San Jose, CA (US);

Assignee:

SanDisk Technologies LLC, Addison, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/15 (2006.01); G06F 17/16 (2006.01); G06N 3/065 (2023.01); G06N 3/08 (2023.01); H03M 1/12 (2006.01); H03M 1/66 (2006.01);
U.S. Cl.
CPC ...
G06N 3/065 (2023.01); G06F 17/16 (2013.01); G06N 3/08 (2013.01); G11C 11/15 (2013.01); H03M 1/1205 (2013.01); H03M 1/662 (2013.01);
Abstract

An MRAM-based vector multiplication device, such as can be used for inferencing in a neural network, is presented that is ultralow power, low cost, and does not require special on-chip programming. A crosspoint array has an MRAM cell at each crosspoint junction and periphery array circuitry capable of supplying independent input voltages to each word line and reading current on each bit line. Vector multiplication is performed as an in-array multiplication of a vector of input voltages with matrix weight values encoded by the MRAM cell states. The MRAM cells can be individually programmed using a combination of input voltages and an external magnetic field. The external magnetic field is chosen so that a write voltage of one polarity reduces the anisotropy sufficiently to align the cell state with the external field, but is insufficient to align the cell if only half of the write voltage is applied.


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