The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2026

Filed:

Jun. 20, 2024
Applicant:

Sandisk Technologies, Inc., Milpitas, CA (US);

Inventors:

Juan P. Saenz, Menlo Park, CA (US);

Michael K. Grobis, Campbell, CA (US);

Assignee:

Sandisk Technologies, Inc., Milpitas, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1673 (2013.01); G11C 11/1659 (2013.01);
Abstract

Technology for reading memory cells in a cross-point memory array. Each memory cell has a threshold switching selector in series with a programmable resistance memory element. The memory system applies a step voltage pulse during a current force read of programmable resistance memory cells in a cross-bar memory array. In an aspect, the step voltage pulse is used to switch on the threshold switching selector. In an aspect, the step voltage pulse is applied after the threshold switching selector switches on when a snapback current may be present. In an aspect, the step voltage pulse is applied after the snapback current has dissipated.


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