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For the Inventor, By the Inventor

Hsinchu, Taiwan

Meng-Sheng Chang

This inventor holds 168 USPTO granted patents and 97 published patent applications, primarily in Semiconductor Memory (CPC class G11C17-16). Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Taiwan Semiconductor Manufacturing Co., Ltd.. Active years: 2018-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Meng-Sheng Chang. Retrieved from https://idiyas.com/inventor/meng-sheng-chang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 168 

% Patents Active = 100.0

Average Co-Inventor Count = 2.8

ph-index = 4

Forward Citations = 95(Granted Patents)

Forward Citations (Not Self Cited) = 36(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • Zhubei, TW (2023)
  • Chu Bei, TW (2018 - 2024)
  • Hsinchu County, TW (2018 - 2024)
  • Hsinchu, TW (2021 - 2024)

Company Filing History:

goldMedal167 out of 42,872 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal1 out of 481 
 
Taiwan Semiconductor Manufacturing Co., Ltd.
 patents

Years Active: 2018-2026

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Areas of Expertise:
Semiconductor Memory Devices
Differential Threshold Voltages
Physically Unclonable Function
One-Time-Programmable Memory
Antifuse Structure
Memory Device Manufacturing
Backside Interconnects
Integrated Circuit
E-Fuse Cells
High Voltage Memory
Memory Cell Formation
Dielectric Fin Structures
168 patents (USPTO):Explore Patents
1. 12764946 - Integrated circuit read only memory (ROM) structure (2026-10-13),
2. 12755790 - Semiconductor memory devices with dielectric fin structures (2026-10-06),
3. 12754679 - Memory circuits with high security and methods for operating the same (2026-10-06),
4. 12749548 - Bit selection for power reduction in stacking structure during memory programming (2026-09-29),
5. 12749547 - High-density and high-voltage-tolerable pure core memory cell (2026-09-29),
6. 12744097 - Semiconductor device and method of manufacturing the same (2026-09-22),
7. 12738339 - Integrated circuit and method of operating same (2026-09-15),
8. 12718854 - Reducing capacitive loading of memory system based on switches (2026-08-25),
9. 12701697 - Integrated circuit device, memory device, and method of manufacturing (2026-08-04),
10. 12700466 - One-time programmable memory devices with heater devices and methods for manufacturing and operating the same (2026-08-04),
11. 12694915 - Memory device (2026-07-28),
12. 12690190 - MIM memory cell with backside interconnect structures (2026-07-21),
13. 12672324 - Memory devices and methods of manufacturing thereof (2026-06-30),
14. 12670959 - Three-dimensional one time programmable memory (2026-06-30),
15. 12666957 - Anti-fuse cells with backside power rails (2026-06-23),

Title: The Innovative Journey of Inventor Meng-Sheng CHANG

Introduction: Meng-Sheng CHANG is a pioneering inventor hailing from Hsinchu, Taiwan. His relentless pursuit of innovation has led to groundbreaking developments in various fields.

Latest Patents: Meng-Sheng CHANG holds several recent patents in the areas of technology and engineering, showcasing his commitment to pushing the boundaries of what is possible.

Career Highlights: With a career spanning over two decades, Meng-Sheng CHANG has worked with prestigious research institutions and leading companies to bring his inventions to life. His contributions have significantly impacted the industry.

Collaborations: Throughout his career, Meng-Sheng CHANG has collaborated with top experts in the field, fostering a culture of creativity and excellence. His ability to work in diverse teams has been instrumental in the success of his projects.

Conclusion: Meng-Sheng CHANG's innovative spirit and dedication to creating solutions for complex challenges make him a standout figure in the world of inventors. His work continues to inspire future generations to think outside the box and pursue their inventive dreams.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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