The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2026
Filed:
Dec. 01, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Meng-Sheng Chang, Hsinchu City, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A memory device includes peripheral transistors formed along a first surface of a substate; memory cells formed in one or more of first metallization layers disposed over the first surface, each of the memory cells being operatively coupled to a subset of the peripheral transistors and including a programming transistor and at least a first reading transistor; and second metallization layers disposed over a second surface of the substrate opposite to the first surface. A first source/drain terminal of the first reading transistor is in electrical connection with a first source/drain terminal of the programming transistor. A second source/drain terminal of the first reading transistor is in electrical connection with a bit line that is formed in a corresponding one of the second metallization layers.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile